savantic semiconductor product specification silicon npn power transistors 2SC3748 description with to-220f package low saturation voltage . excellent dependence of h f e on current. fast switching speed. applications car-use inductance drivers, lamp drivers. inverters drivers, conveters (strobes, flashes, flt lighting circuits). power amplifiers high-speed switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 12 a 2 p c collector dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3748 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 80 v v (br)ceo collector-emitter breakdown voltage i c =1ma; r be = ; 60 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =5a; i b =0.25a 0.4 v i cbo collector cut-off current v cb =40v ;i e =0 100 a i ebo emitter cut-off current v eb =4v; i c =0 100 a h fe dc current gain i c =1a ; v ce =2v 70 280 f t transition frequency i c =1a ; v ce =5v 100 mhz switching times t on turn-on time 0.1 s t stg storage time 0.5 s t f fall time v cc =20v; i c =5a i b1 =-i b2 =0.25a r l =4 c 0.1 s h fe classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon npn power transistors 2SC3748 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SC3748
|
